NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

RF amplifier

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NPN Silicon Transistor (RF amplifier)

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

0.02A , 30V NPN Plastic Encapsulated Transistor

FEATURE • RF amplifier • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

Silicon Epitaxial Planar Transistor

FEATURES ● High current transition frequency ● Low output capacitance:Cob=1.4pF ● Low base time constant and high gain ● Excellent noise response APPLICATIONS ● General small signal amplifier

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

TRANSISTOR (NPN)

FEATURES ● RF amplifier ● High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] ● Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] ● Low base time constant and high gain ● Excellent noise response