型号 功能描述 生产厂家&企业 LOGO 操作
2SC5345

NPN Silicon Transistor (RF amplifier)

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

AUK

2SC5345

Silicon Epitaxial Planar Transistor

FEATURES ● High current transition frequency ● Low output capacitance:Cob=1.4pF ● Low base time constant and high gain ● Excellent noise response APPLICATIONS ● General small signal amplifier

BILIN

银河微电

2SC5345

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

KODENSHI

可天士

2SC5345

TRANSISTOR (NPN)

FEATURES ● RF amplifier ● High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] ● Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] ● Low base time constant and high gain ● Excellent noise response

HTSEMI

金誉半导体

2SC5345

0.02A , 30V NPN Plastic Encapsulated Transistor

FEATURE • RF amplifier • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC5345

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High transition frequency, low output capacitance. Applications RF amplifier applications.

FOSHAN

蓝箭电子

2SC5345

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● RF amplifier ● High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] ● Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] ● Low base time constant and high gain ● Excellent noise response

JIANGSU

长电科技

2SC5345

TRANSISTOR (NPN)

FEATURES ● RF amplifier ● High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] ● Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] ● Low base time constant and high gain ● Excellent noise response

KOOCHIN

2SC5345

Silicon Epitaxial Planar Transistor

FEATURES ● High current transition frequency ● Low output capacitance:Cob=1.4pF ● Low base time constant and high gain ● Excellent noise response APPLICATIONS ● General small signal amplifier

LUGUANG

鲁光电子

2SC5345

SOT-23 Plastic-Encapsulate Transistors

FEATURES RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response

DGNJDZ

南晶电子

2SC5345

TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Transition Frequency Low Output Capacitance Low Base Time Constant and High Gain Excellent Noise Response APPLICATIONS RF Amplifier

DGNJDZ

南晶电子

2SC5345

Silicon Epitaxial Planar Transistor

文件:163.34 Kbytes Page:4 Pages

BILIN

银河微电

2SC5345

RF amplifier

文件:264.8 Kbytes Page:5 Pages

KODENSHI

可天士

TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Transition Frequency Low Output Capacitance Low Base Time Constant and High Gain Excellent Noise Response APPLICATIONS RF Amplifier

DGNJDZ

南晶电子

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

KODENSHI

可天士

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

KODENSHI

可天士

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

AUK

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

KODENSHI

可天士

NPN Silicon Transistor

Description • RF amplifier Features • High transition frequency : fT=550MHz(Typ.) @[VCE=6V, IC=1mA] • Low output capacitance : Cob=1.4pF (Typ.) @[VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

AUK

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

AUK

RF amplifier

Description • RF amplifier ​​​​​​​ Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

KODENSHI

可天士

TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Transition Frequency Low Output Capacitance Low Base Time Constant and High Gain Excellent Noise Response APPLICATIONS RF Amplifier

DGNJDZ

南晶电子

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

KODENSHI

可天士

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

AUK

Silicon Epitaxial Planar Transistor

文件:163.34 Kbytes Page:4 Pages

BILIN

银河微电

NPN Plastic Encapsulated Transistor

文件:704.06 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

RF amplifier

文件:204.63 Kbytes Page:5 Pages

KODENSHI

可天士

RF amplifier

文件:313.79 Kbytes Page:5 Pages

KODENSHI

可天士

RF amplifier

文件:259.04 Kbytes Page:5 Pages

KODENSHI

可天士

2SC5345产品属性

  • 类型

    描述

  • 型号

    2SC5345

  • 制造商

    BILIN

  • 制造商全称

    Galaxy Semi-Conductor Holdings Limited

  • 功能描述

    Silicon Epitaxial Planar Transistor

更新时间:2025-8-7 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
24+
NA/
45000
优势代理渠道,原装正品,可全系列订货开增值税票
AUK
25+
SOT-523
54648
百分百原装现货 实单必成
KEC
25+
SOT-323
32000
KEC全新特价2SC5345UY即刻询购立享优惠#长期有货
AUK
05+
SOT-23F
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AUK
23+
NA
100000
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
长电
21+
SOT-23
30000
原装现货假一赔十
MSV
2016+
SOT-23
6000
只做原装,假一罚十,公司可开17%增值税发票!
AUK
2223+
SOT-23
26800
只做原装正品假一赔十为客户做到零风险
长电
2020+
SOT-23
393000
百分百原装正品 真实公司现货库存 本公司只做原装 可
CJ/长电
21+
SOT-23
30000
百域芯优势 实单必成 可开13点增值税发票

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