NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended. On special request, these transistors

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended. On special request, these transistors

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 2SC1213 : 35 V 2SC1213A : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

NPN Silicon General Purpose Transistor

FEATURES • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

Silicon NPN Epitaxial

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General Purpose Transistor

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