PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Low VCE(sat) Transistor

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

Low VCE(sat) Transistor (−20V, −3A)

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