SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SCHOTTKY RECTIFIER

文件：107.66 Kbytes Page：6 Pages

肖特基二极管

超低正向肖特基二极管

肖特基二极管

封装/外壳：TO-220-3 包装：散装 描述：DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

文件：105.09 Kbytes Page：5 Pages

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

LOW VF SCHOTTKY RECTIFIER

文件：52.63 Kbytes Page：2 Pages

LOW VF SCHOTTKY RECTIFIER

文件：71.1 Kbytes Page：4 Pages

Ultra low forward voltage drop, low power loss

文件：98.01 Kbytes Page：4 Pages

Ultra low forward voltage drop, low power loss

文件：67.95 Kbytes Page：4 Pages