These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.

Features:

• Collector–Emitter Voltage — VCEV = 1000 Vdc

• Fast Turn–Off Times

50 ns Inductive Fall Time — 100
C (Typ)

90 ns Inductive Crossover Time — 100
C (Typ)

900 ns Inductive Storage Time — 100
C (Typ)

• 100
C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents

• Extended FBSOA Rating Using Ultra–fast Rectifiers

• Extremely High RBSOA Capability

Typical Applications:

• Switching Regulators

• Inverters

• Solenoids

• Relay Drivers

• Motor Controls

• Deflection Circuits