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MJW16010

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

ONSEMI

安森美半导体

MJW16010

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

MOTOROLA

摩托罗拉

MJW16010

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage ,high speed APPLICATIONS • Switching Regulators • Inverters • Solenoids • Relay Drivers • Motor Controls • Deflection Circuits

SAVANTIC

MJW16010

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage ,high speed APPLICATIONS • Switching Regulators • Inverters • Solenoids • Relay Drivers • Motor Controls • Deflection Circuits

ISC

无锡固电

MJW16010

SWITCHMODE Series NPN Silicon Power Transistors

These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJW16010

Silicon NPN Power Transistors

文件:129.49 Kbytes Page:3 Pages

SAVANTIC

MJW16010

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

ETC

知名厂家

MJW16010

Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-247AE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJW16010

NPN SILICON POWER TRANSISTORS

ONSEMI

安森美半导体

POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 50 ns Induct

MOTOROLA

摩托罗拉

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

ISC

无锡固电

NPN Silicon Power Transistors

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times • 50 ns Inductiv

ONSEMI

安森美半导体

Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

ONSEMI

安森美半导体

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

MOTOROLA

摩托罗拉

MJW16010产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Emitter Saturation Voltage:

    2.5@0.7A@5A

  • Maximum Collector Emitter Voltage:

    450V

  • Maximum DC Collector Current:

    15A

  • Maximum Emitter Base Voltage:

    6V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    135000mW

  • Type:

    NPN

更新时间:2026-5-21 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
2023+
TO-247
8635
全新原装正品,优势价格
ON/安森美
22+
TO-247
20000
公司只有原装 品质保障
ON/安森美
23+
TO-3P
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
ON
25+23+
TO-247
55321
绝对原装正品现货,全新深圳原装进口现货
SPTECH
2447
TO-3PN
105000
30个/管一级代理专营品牌!原装正品,优势现货,长期
ON/安森美
23+
TO247
50000
全新原装正品现货,支持订货
ON(安森美)
23+
12543
公司只做原装正品,假一赔十
ON进口
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
onsemi
25+
TO-247-3
7786
正规渠道,免费送样。支持账期,BOM一站式配齐

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