NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage ,high speed APPLICATIONS • Switching Regulators • Inverters • Solenoids • Relay Drivers • Motor Controls • Deflection Circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage ,high speed APPLICATIONS • Switching Regulators • Inverters • Solenoids • Relay Drivers • Motor Controls • Deflection Circuits

SWITCHMODE Series NPN Silicon Power Transistors

These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

Silicon NPN Power Transistors

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15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-247AE

NPN SILICON POWER TRANSISTORS

POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 50 ns Induct

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

NPN Silicon Power Transistors

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times • 50 ns Inductiv

Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati