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ST10150C

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SMCDIODE

桑德斯微电子

ST10150C

SCHOTTKY RECTIFIER

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SMC

桑德斯微电子

低正向压降肖特基整流器

ANSAS

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS

For Use As A Damper Diode In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performa

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS

For Use As A Damper Diode In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performa

MOTOROLA

摩托罗拉

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

High voltage power Schottky rectifier Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

High voltage power Schottky rectifier Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low

STMICROELECTRONICS

意法半导体

ST10150C产品属性

  • 类型

    描述

  • VRRM(V):

    150

  • IF(A):

    10

  • VF[Typ.](V):

    0.82

  • IR[Typ.](uA):

    1

  • IFSM(A):

    80

  • TJ[max.](℃):

    150

  • Configuration:

    Common Cathode

更新时间:2026-7-31 15:47:00
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只做原装公司现货

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