N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

丝印代码：T8；N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

JFET Amplifiers

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER

文件：168.55 Kbytes Page：2 Pages

N-Channel JFET General Purpose Amplifier

文件：33.45 Kbytes Page：1 Pages

丝印代码：T8；N-Channel JFETs

文件：74.32 Kbytes Page：6 Pages

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER

文件：333.45 Kbytes Page：2 Pages

Linear Systems replaces discontinued Siliconix SST4118

文件：284.96 Kbytes Page：1 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ULTRA HIGH INPUT IMPEDANCE N-CHA 分立半导体产品 晶体管 - JFET

an Ultra-High Input Impedance N-Channel JFET

文件：284.96 Kbytes Page：1 Pages

JFET N-CH 70V 80UA SOT-23

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：JFET N-CH 70V 80UA SOT-23 分立半导体产品 晶体管 - JFET

RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4116 family of frequency synthesizers can be used to implement local oscillators in the up-conversion and down conversion sections of wireless receivers and transmitters. They consist of a low-noise digital PFD (Phase Frequency Detector), a precision charge pump, a pr

ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER

DESCRIPTION The IL411x consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual inline package, using high insulation dou

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping