18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

18 mm Discrete HFET

RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4116 family of frequency synthesizers can be used to implement local oscillators in the up-conversion and down conversion sections of wireless receivers and transmitters. They consist of a low-noise digital PFD (Phase Frequency Detector), a precision charge pump, a pr

ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER

DESCRIPTION The IL411x consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual inline package, using high insulation dou

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping