型号 功能描述 生产厂家 企业 LOGO 操作

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF010/020/040 – 2.7-3.6V for SST39VF010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (

Microchip

微芯科技

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERAL DESCRIPTION The W39V040A is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programmed a

WINBOND

华邦电子

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERAL DESCRIPTION The W39V040A is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programmed a

WINBOND

华邦电子

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERAL DESCRIPTION The W39V040A is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programmed a

WINBOND

华邦电子

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1. GENERAL DESCRIPTION The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply.

WINBOND

华邦电子

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1. GENERAL DESCRIPTION The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply.

WINBOND

华邦电子

更新时间:2025-12-30 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
23+
TSSOP
50000
全新原装正品现货,支持订货
SST
2450+
SOP
9850
只做原厂原装正品现货或订货假一赔十!
SST
24+
PLCC
35200
一级代理/放心采购
SST
23+
TSSOP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SST
22+
PLCC
8000
原装现货库存.价格优势
SST
20+
SOP
2960
诚信交易大量库存现货
SST
23+24
TSOP-
9680
原盒原标.进口原装.支持实单 .价格优势
SST
25+
BGA
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
SST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
SST
24+
BGA
2000
原装现货,可开13%税票

SST39V040数据表相关新闻