位置：首页 > IC中文资料第5980页 > SST36VF1602C
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SST36VF1602C | 16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc |   | |
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and ma | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：871.45 Kbytes Page：23 Pages | GreenliantGreenliantsystems,LTD 绿芯半导体绿芯存储科技（厦门）有限公司 | |
SST36VF1602C产品属性
- 类型
描述
- 型号
SST36VF1602C
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
16 Mbit(x8/x16) Dual-Bank Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
BGA |
6000 |
全新原装,一手货源,全场热卖! |
|||
SST |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SST |
2447 |
TSSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SST |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
SST |
22+ |
TSOP |
3000 |
原装正品,支持实单 |
|||
SST |
24+ |
TSOP |
65200 |
一级代理/放心采购 |
|||
SST |
24+ |
BGA |
27000 |
绝对全新原装现货特价销售,欢迎来电查询 |
|||
SST |
24+ |
BGA |
6000 |
只做原装，欢迎询价，量大价优 |
|||
现货SST |
25+ |
原厂原封可拆样 |
65248 |
百分百原装现货 实单必成 |
|||
现货SST |
21+ |
BGA |
2000 |
全新原装 现货 价优 |
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2019-8-29
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