SST29VE010A参数引脚图现货行情报价SST-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
SST29VE010A	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29VE010	1 Mbit (128K x8) Page-Write EEPROM 文件：458.14 Kbytes Page：30 Pages	SST Silicon Storage Technology, Inc	SST
SST29VE010	1 Megabit (128K x 8) Page Mode EEPROM 文件：882.72 Kbytes Page：27 Pages	SST Silicon Storage Technology, Inc	SST
SST29VE010	1 Megabit (128K x8) Page-Mode EEPROM 文件：267.81 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-120-4I-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-150-4I-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29VE010A-200-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST

SST29VE010A供应商更多...

更新时间：2025-12-29 17:17:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	SST29VE020	SST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市豪迈兴电子有限公司	SST29VE020-200-4C-NH	SST	24+	TSOP	6232	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市得捷芯城科技有限公司	SST29VE020-200-4C-EH	SST	24+	NA/	107	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市恒达亿科技有限公司	SST29VE020-200-4C-EH	SST	25+	TSOP	3000	全新原装、诚信经营、公司现货销售!	询价
深圳市明嘉莱科技有限公司	SST29VE020-250-4C-EH	SST	99+	TSOP32	880000	明嘉莱只做原装正品现货	询价
深圳市胜彬电子有限公司	SST29VE020-200-4C-EH	SST	22+	TSOP	3000	原装正品,支持实单	询价
深圳市宇集芯电子有限公司	SST29VE020-200-4C-EH	SST	24+	TSOP32	90000	一级代理商进口原装现货、假一罚十价格合理	询价
深圳市佳鑫美电子科技有限公司	SST29VE020-200-4C-EH	SST	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市柯尔基电子有限公司	SST29VE020-200-4C-EH	SST	23+24	TSSOP	29650	原装正品优势渠道价格合理.可开13%增值税发票	询价
深圳市壹芯创科技有限公司	SST29VE020	SST	22+	TSOP	8000	原装现货库存.价格优势	询价

SST29VE010A芯片相关品牌

SST29VE010A规格书下载地址

SST29VE010A参数引脚图相关

SST29VE010A数据表相关新闻

SST25WF040B-40I/SN
SST25WF040B-40I/SN
2023-3-28
SST26VF016BT-80E/SM
SST26VF016BT-80E/SM
2022-8-12
SST26VF016BT-80E/MF
SST26VF016BT-80E/MF
2022-8-12
SST39VF1601-70-4I-EKE
www.58chip.com
2022-5-9
SST39VF040-70-4C-NHE
2 Gbit NOR闪存 , Parallel 8 bit NOR闪存 , 32 bit NOR闪存 , DFN-8 NOR闪存 , 128 Mbit SMD/SMT 2 V 1.65 V NOR闪存 , 128 Mbit SPI NOR Flash 1.65 V NOR闪存
2020-7-8
SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货
SST34HF1641J-70-4E-L1PE 拓亿芯电子刘先生 0755-82777855 qq 1774550803
2019-8-29

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

SST29VE010A供应商更多...

SST29VE010A芯片相关品牌

SST29VE010A规格书下载地址

SST29VE010A参数引脚图相关

SST29VE010A数据表相关新闻

SST25WF040B-40I/SN

SST26VF016BT-80E/SM

SST26VF016BT-80E/MF

SST39VF1601-70-4I-EKE

SST39VF040-70-4C-NHE

SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货

DdatasheetPDF页码索引