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型号	功能描述	生产厂家企业	LOGO
SST29LE010A	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29LE010	1 Megabit (128K x 8) Page Mode EEPROM 文件：882.72 Kbytes Page：27 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010	1 Megabit (128K x8) Page-Mode EEPROM 文件：267.81 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-120-4I-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-150-4I-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29LE010A-200-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST

SST29LE010A供应商更多...

更新时间：2025-12-30 17:03:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市赛美科科技有限公司	SST29LE020-120-4C-NH	SST		PLCC32	68500	一级代理原装正品假一罚十价格优势长期供货	询价
瀚佳科技(深圳)有限公司	SST29LE010A-150-4I-WH	SST	24+		9850	公司原装现货/随时可以发货	询价
深圳市胜彬电子有限公司	SST29LE020-120-4C-NH	SST	22+	PLCC-32	3000	原装正品,支持实单	询价
京海半导体(深圳)有限公司	SST29LE020-150-4C-NH	SST	21+	PLCC32	10000	原装现货假一罚十	询价
深圳市坤融电子科技有限公司	SST29LE010A-200-4C-WH	SST	2025+	TSOP-32	5000	原装进口,免费送样品!	询价
深圳市福田区绿盛电子商行	SST29LE020	SST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市向鸿伟业电子有限公司	SST29LE020-120-4C-NH	SST	2402+	PLCC32	8324	原装正品!实单价优!	询价
深圳市壹芯创科技有限公司	SST29LE020	SST	22+	PLCC	8000	原装现货库存.价格优势	询价
深圳市沃泰克斯电子技术有限公司	SST29LE020-150-4I-NH	SST	0037P/QX	PLCC	61	只做原装,现货库存	询价
深圳市一线半导体有限公司	SST29LE020		24+		50	本站现库存	询价

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SST29LE010A供应商更多...

SST29LE010A芯片相关品牌

SST29LE010A规格书下载地址

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SST29LE010A数据表相关新闻

SST25WF040B-40I/SN

SST26VF016BT-80E/SM

SST26VF016BT-80E/MF

SST39VF1601-70-4I-EKE

SST39VF040-70-4C-NHE

SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货

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