型号 功能描述 生产厂家 企业 LOGO 操作
SST29LE010A-120-4I-P

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

更新时间:2026-2-11 13:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
24+
TSSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SST
2402+
PLCC32
8324
原装正品!实单价优!
SST
23+
PLCC
50000
全新原装正品现货,支持订货
SST
24+
PLCC
5000
全新原装正品,现货销售
SST
23+
TSOP32
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SST
23+
PLCC
50000
全新原装正品现货,支持订货
SST
2024+
PLCC
50000
原装现货
24+
50
本站现库存
SST
23+24
PLCC
9680
原盒原标.进口原装.支持实单 .价格优势
SST
22+
PLCC
8000
原装现货库存.价格优势

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