型号 功能描述 生产厂家 企业 LOGO 操作
SST29LE010A-120-4I-P

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

更新时间:2025-11-3 23:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
2024+
PLCC
50000
原装现货
SST
24+
NA/
11
优势代理渠道,原装正品,可全系列订货开增值税票
SST PLCC
23+
NA
20000
全新原装假一赔十
SST
TSOP32
16
全新原装进口自己库存优势
SST
24+
PLCC
5000
全新原装正品,现货销售
SST
原厂封装
9800
原装进口公司现货假一赔百
SST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
SST
22+
PLCC-32
3000
原装正品,支持实单
SST
2402+
PLCC32
8324
原装正品!实单价优!
SST
22+
PLCC
8000
原装现货库存.价格优势

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