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型号	功能描述	生产厂家企业	LOGO
SST29EE010	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Megabit (128K x 8) Page Mode EEPROM 文件：882.72 Kbytes Page：27 Pages	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Megabit (128K x8) Page-Mode EEPROM 文件：267.81 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Mbit (128K x8) Page-Write EEPROM 文件：458.14 Kbytes Page：30 Pages	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Mbit (128K x8) Page-Mode EEPROM	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4C-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4C-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4C-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4C-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4C-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4I-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4I-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4I-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4I-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-150-4I-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4C-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4C-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4C-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4C-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4C-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4I-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4I-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4I-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4I-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-200-4I-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4C-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4C-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4C-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4C-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4C-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4I-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4I-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4I-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4I-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-250-4I-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4C-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4C-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4C-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4C-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4C-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4I-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4I-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4I-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4I-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-70-4I-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4C-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4C-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4C-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4C-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4C-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4I-EH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4I-NH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4I-PH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4I-UH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010-90-4I-WH	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010A	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST

SST29EE010产品属性

类型
描述
型号
SST29EE010
制造商
SST
制造商全称
Silicon Storage Technology, Inc
功能描述
1 Megabit(128K x8) Page-Mode EEPROM

SST29EE010供应商更多...

更新时间：2026-1-27 17:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市力拓辉电子有限公司	SST29EE010-90-4C-NHE	SST	21+	PLCC32	8000	全新原装鄙视假货	询价
深圳市拓亿芯电子有限公司	SST29EE010-90-4C-NHE	SST	25+	PLCC	25000	只做进口原装假一罚百	询价
深圳市鸿昌盛电子科技有限公司	SST29EE010-90-4C-NHE	GREENLIANT	25+		9178	公司原装现货常备库存!	询价
深圳市宏世佳电子科技有限公司	SST29EE010-150-4C-PH	SST	2025+	DIP	3485	全新原装、公司现货热卖	询价
深圳市明嘉莱科技有限公司	SST29EE010-120-4C-EH	SST/超捷	20+	明嘉莱只做原装正品现货	2510000	TSSOP	询价
深圳市欧立现代科技有限公司	SST29EE010-70-4C-P	SST	24+	DIP	6250	全新原装现货,欢迎询购!!	询价
深圳市芯皇电子有限公司	SST29EE010-90-4C-EHE	SST	TSSOP32	23+	6000	专业配单原装正品假一罚十	询价
深圳市坤融电子科技有限公司	SST29EE010A-90-4I-EH	SST	2025+	TSSOP-32	5000	原装进口,免费送样品!	询价
深圳市卓越微芯电子有限公司	SST29EE010-90-4C-EHE	SST	25+	TSSOP32	18600	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海鑫科润电子科技有限公司	SST29EE010-120-4C-NH	SST	14+	PLCC	9860	大量原装进口现货,一手货源,一站式服务,可开17%增	询价

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SST29EE010产品属性

SST29EE010供应商更多...

SST29EE010芯片相关品牌

SST29EE010规格书下载地址

SST29EE010参数引脚图相关

SST29EE010数据表相关新闻

SST25WF040B-40I/SN

SST26VF016BT-80E/SM

SST26VF016BT-80E/MF

SST39VF1601-70-4I-EKE

SST39VF040-70-4C-NHE

SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货

DdatasheetPDF页码索引