位置：首页 > IC中文资料第5651页 > SST28VF040A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST28VF040A | 4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc |   | |
SST28VF040A | 4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | |
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | |
SST28VF040A产品属性
- 类型
描述
- 型号
SST28VF040A
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
4 Mbit(512K x8) SuperFlash EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
NA/ |
3518 |
原厂直销,现货供应,账期支持! |
|||
SST |
2016+ |
PLCC-32 |
1575 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SST |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
SST |
23+ |
7 |
专做原装正品,假一罚百! |
||||
SST |
22+ |
PLCC32 |
100000 |
代理渠道/只做原装/可含税 |
|||
SST |
25+ |
PLCC32 |
54658 |
百分百原装现货 实单必成 |
|||
SST |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SST |
137 |
PLCC32 |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
SST |
21+ |
PLCC-32 |
7500 |
只做原装所有货源可以追溯原厂 |
SST28VF040A规格书下载地址
SST28VF040A参数引脚图相关
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- SST404
- SST403
- SST402
- SST401
- SST3S-C
- SST3I-C
- SST3906
- SST3904
- SST390
- SST375
- SST3585
- SST3215
- SST310
- SST309
- SST308
- SST30
- SST3.5
- SST2S-C
- SST2I-C
- SST2H-D
- SST28VF040A-200-4C-PH
- SST28VF040A-200-4C-NHE
- SST28VF040A-200-4C-NH
- SST28VF040A-200-4C-EHE
- SST28VF040A-200-4C-EH
- SST28VF040A-200
- SST28VF040A-150-4I-WH
- SST28VF040A-150-4I-PH
- SST28VF040A-150-4I-NH
- SST28VF040A-150-4I-EH
- SST28VF040A-150-4C-WH
- SST28VF040A-150-4C-PH
- SST28VF040A-150-4C-NHE
- SST28VF040A-150-4C-NH
- SST28VF040A-150-4C-EHE
- SST28VF040A-150-4C-EH
- SST28VF040A-150
- SST28VF040A-120-4C-PH
- SST28VF040A-120-4C-NH
- SST28VF040A-120-4C-EH
- SST28SF040A-90-4I-WH
- SST28SF040A-90-4I-PH
- SST28SF040A-90-4I-NH
- SST28SF040A-90-4I-EH
- SST28SF040A-90-4C-WH
- SST28SF040A-90-4C-PH
- SST28SF040A-90-4C-NH
- SST28SF040A-90-4C-EH
- SST28SF040A-150-4I-EH
- SST28SF040A-150-4C-WH
- SST28SF040A-150-4C-PH
- SST28SF040A-150-4C-NH
- SST28SF040A-150-4CNH
- SST28SF040A-150-4C-EH
- SST28SF040A-120-4I-WH
- SST28SF040A-120-4I-PH
- SST28SF040A-120-4I-NH
- SST28SF040A-120-4I-EH
- SST28SF040A-120-4C-WH
- SST28SF040A-120-4C-PH
- SST271
- SST270
- SST2630
- SST2625
- SST2623
- SST2622
- SST2610
- SST2605
- SST2604
- SST2603
- SST2602
- SST240
- SST215
- SST214
- SST213
- SST211
- SST2100
- SST210
- SST204
- SST203
SST28VF040A数据表相关新闻
SST25WF040B-40I/SN
SST25WF040B-40I/SN
2023-3-28SST26VF016BT-80E/SM
SST26VF016BT-80E/SM
2022-8-12SST26VF016BT-80E/MF
SST26VF016BT-80E/MF
2022-8-12SST39VF1601-70-4I-EKE
www.58chip.com
2022-5-9SST39VF040-70-4C-NHE
2 Gbit NOR闪存 , Parallel 8 bit NOR闪存 , 32 bit NOR闪存 , DFN-8 NOR闪存 , 128 Mbit SMD/SMT 2 V 1.65 V NOR闪存 , 128 Mbit SPI NOR Flash 1.65 V NOR闪存
2020-7-8SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货
SST34HF1641J-70-4E-L1PE 拓亿芯电子 刘先生 0755-82777855 qq 1774550803
2019-8-29
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
