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SST28VF040A-200-4C-NH中文资料

厂家型号

SST28VF040A-200-4C-NH

文件大小

323.43Kbytes

页面数量

24

功能描述

4 Mbit (512K x8) SuperFlash EEPROM

电可擦除可编程只读存储器 512K X 8 200ns

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

SST28VF040A-200-4C-NH数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.

Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 µs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

FEATURES:

• Single Voltage Read and Write Operations

– 5.0V-only for SST28SF040A

– 2.7-3.6V for SST28VF040A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Memory Organization: 512K x8

• Sector-Erase Capability: 256 Bytes per Sector

• Low Power Consumption

– Active Current: 15 mA (typical) for 5.0V and

10 mA (typical) for 2.7-3.6V

– Standby Current: 5 µA (typical)

• Fast Sector-Erase/Byte-Program Operation

– Byte-Program Time: 35 µs (typical)

– Sector-Erase Time: 2 ms (typical)

– Complete Memory Rewrite: 20 sec (typical)

• Fast Read Access Time

– 5.0V-only operation: 90 and 120 ns

– 2.7-3.6V operation: 150 and 200 ns

• Latched Address and Data

• Hardware and Software Data Protection

– 7-Read-Cycle-Sequence Software Data

Protection

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm and 8mm x 20mm)

– 32-pin PDIP

SST28VF040A-200-4C-NH产品属性

  • 类型

    描述

  • 型号

    SST28VF040A-200-4C-NH

  • 功能描述

    电可擦除可编程只读存储器 512K X 8 200ns

  • RoHS

  • 制造商

    Atmel

  • 存储容量

    2 Kbit

  • 组织

    256 B x 8

  • 数据保留

    100 yr

  • 最大时钟频率

    1000 KHz

  • 最大工作电流

    6 uA

  • 工作电源电压

    1.7 V to 5.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

更新时间:2025-10-18 16:00:00
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