位置：首页 > IC中文资料第542页 > SST28SF040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc |   | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x 8) super-flash EEPROM | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | |
SST28SF040产品属性
- 类型
描述
- 型号
SST28SF040
- 制造商
Silicon Storage Technology(SST)
- 功能描述
NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
NA/ |
3278 |
原厂直销,现货供应,账期支持! |
|||
SST |
14 |
PLCC |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
25+ |
DIP32 |
2568 |
原装优势!绝对公司现货 |
|||
SST |
22+ |
PLCC |
3000 |
原装正品,支持实单 |
|||
SST |
25+ |
TSOP |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
TSSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SST |
23+ |
PLCC |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SST |
2402+ |
TSOP32 |
8324 |
原装正品!实单价优! |
|||
SST |
22+ |
PLCC |
8000 |
原装现货库存.价格优势 |
|||
SST |
17+ |
TSOP |
6200 |
SST28SF040芯片相关品牌
SST28SF040规格书下载地址
SST28SF040参数引脚图相关
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- SST27VF020-90-3C-PHE
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- SST27VF020-70-3C-NHE
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SST28SF040数据表相关新闻
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2 Gbit NOR闪存 , Parallel 8 bit NOR闪存 , 32 bit NOR闪存 , DFN-8 NOR闪存 , 128 Mbit SMD/SMT 2 V 1.65 V NOR闪存 , 128 Mbit SPI NOR Flash 1.65 V NOR闪存
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SST34HF1641J-70-4E-L1PE 拓亿芯电子 刘先生 0755-82777855 qq 1774550803
2019-8-29
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