型号 功能描述 生产厂家&企业 LOGO 操作
SST28SF040A

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

SST28SF040A

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

4 Mbit (512K x8) SuperFlash EEPROM

文件:339.59 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

SST28SF040A产品属性

  • 类型

    描述

  • 型号

    SST28SF040A

  • 制造商

    SST

  • 制造商全称

    Silicon Storage Technology, Inc

  • 功能描述

    4 Mbit(512K x8) SuperFlash EEPROM

更新时间:2025-8-11 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
24+
PLCC32
30000
原装正品公司现货,假一赔十!
SST
23+
TSOP
30000
代理全新原装现货,价格优势
SST
2430+
PLCC32
8540
只做原装正品假一赔十为客户做到零风险!!
SST
23+
PLCC32
30
原装现货假一赔十
SST
20+
TSOP32
2960
诚信交易大量库存现货
SST
25+
PLCC
13800
原装,请咨询
SST
21+
PLCC32
10000
全新原装现货
SST
25+
PLCC32
880000
明嘉莱只做原装正品现货
SST
23+
429
专做原装正品,假一罚百!
SST
23+
NA
3680
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品

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