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型号	功能描述	生产厂家企业	LOGO
SST28SF040A	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A	4 Mbit (512K x8) SuperFlash EEPROM	SST Silicon Storage Technology, Inc	SST
SST28SF040A	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4I-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4I-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4I-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4I-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4C-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4C-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4C-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4I-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4I-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4I-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-150-4I-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4C-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4C-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4C-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4I-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4I-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4I-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-200-4I-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4I-EH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4I-NH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4I-PH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4I-WH	4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability	SST Silicon Storage Technology, Inc	SST
SST28SF040A_03	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-NH	4 Mbit (512K x 8) super-flash EEPROM	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4C-NH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4I-EH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-120-4I-NH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-EH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-NH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST
SST28SF040A-90-4C-PH	4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages	SST Silicon Storage Technology, Inc	SST

SST28SF040A产品属性

类型
描述
型号
SST28SF040A
制造商
SST
制造商全称
Silicon Storage Technology, Inc
功能描述
4 Mbit(512K x8) SuperFlash EEPROM

SST28SF040A供应商更多...

更新时间：2025-12-30 17:16:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	SST28SF040A-90-4C-NH	SST	25+	PLCC32	18600	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市赛美科科技有限公司	SST28SF040A-120-4C-EH	SST		TSSOP32	53650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市星佑电子有限公司	SST28SF040A-120-4C-E	SST	06+	TSOP	1000	自己公司全新库存绝对有货	询价
深圳市美思瑞电子科技有限公司	SST28SF040A-90-4C-EH	SST	22+	TSOP32	19025	原装正品，实单请联系	询价
深圳市拓亿芯电子有限公司	SST28SF040A-120-4C-EH	SST	25+	TSOP	30000	代理全新原装现货,价格优势	询价
瀚佳科技(深圳)有限公司	SST28SF040A/SST28SF040	SST	24+		9850	公司原装现货/随时可以发货	询价
深圳市华斯顿科技有限公司	SST28SF040A-120-41-NH	SST原装特价出售	25+23+	PLCC	41660	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	SST28SF040A	SST	22+	PLCC	3000	原装正品,支持实单	询价
千层芯半导体(深圳)有限公司	SST28SF040A-120-4C-EH	SST	24+	TSSOP32	4370	进口原装现货假一罚十	询价
京海半导体(深圳)有限公司	SST28SF040A-90-4C-NH	SST	23+	PLCC	98900	原厂原装正品现货!!	询价

SST28SF040A芯片相关品牌

SST28SF040A规格书下载地址

SST28SF040A参数引脚图相关

SST28SF040A数据表相关新闻

SST25WF040B-40I/SN
SST25WF040B-40I/SN
2023-3-28
SST26VF016BT-80E/SM
SST26VF016BT-80E/SM
2022-8-12
SST26VF016BT-80E/MF
SST26VF016BT-80E/MF
2022-8-12
SST39VF1601-70-4I-EKE
www.58chip.com
2022-5-9
SST39VF040-70-4C-NHE
2 Gbit NOR闪存 , Parallel 8 bit NOR闪存 , 32 bit NOR闪存 , DFN-8 NOR闪存 , 128 Mbit SMD/SMT 2 V 1.65 V NOR闪存 , 128 Mbit SPI NOR Flash 1.65 V NOR闪存
2020-7-8
SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货
SST34HF1641J-70-4E-L1PE 拓亿芯电子刘先生 0755-82777855 qq 1774550803
2019-8-29

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SST28SF040A产品属性

SST28SF040A供应商更多...

SST28SF040A芯片相关品牌

SST28SF040A规格书下载地址

SST28SF040A参数引脚图相关

SST28SF040A数据表相关新闻

SST25WF040B-40I/SN

SST26VF016BT-80E/SM

SST26VF016BT-80E/MF

SST39VF1601-70-4I-EKE

SST39VF040-70-4C-NHE

SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货

DdatasheetPDF页码索引