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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SST28SF040A | 4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc |   | |
SST28SF040A | 4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | |
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
4 Mbit (512K x8) SuperFlash EEPROM 文件：339.59 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | |
SST28SF040A产品属性
- 类型
描述
- 型号
SST28SF040A
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
4 Mbit(512K x8) SuperFlash EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
23+ |
PLCC |
10000 |
公司只做原装，可来电咨询 |
|||
SST |
24+ |
PLCC32 |
30000 |
原装正品公司现货,假一赔十! |
|||
SST |
1626+ |
PLCC32 |
3250 |
代理品牌 |
|||
SST |
2022 |
TSSOP |
2400 |
原装现货 |
|||
SST |
24+ |
TSOP |
27000 |
绝对全新原装现货特价销售,欢迎来电查询 |
|||
SST |
24+ |
DIP |
65200 |
一级代理/放心采购 |
|||
SST |
01+ |
PLCC32 |
250 |
就找我吧!--邀您体验愉快问购元件! |
|||
SST |
03+ |
TSOP/32 |
62 |
原装现货海量库存欢迎咨询 |
|||
SST |
25+ |
DIP |
9183 |
只做原装进口!正品支持实单! |
|||
SST |
16+ |
TSSOP |
8000 |
原装现货请来电咨询 |
SST28SF040A芯片相关品牌
SST28SF040A规格书下载地址
SST28SF040A参数引脚图相关
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- SST28SF040A-120-4C-WH
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- SST28SF040-150-4C-NH
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- SST28SF040-120-4C-EH
- SST28LF040-200-3C-NH
- SST27VF020-90-3C-PHE
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- SST27VF020-70-3C-WHE
- SST27VF020-70-3C-WH
- SST27VF020-70-3C-NHE
- SST27VF020-70-3C-NH
- SST27VF020
- SST27VF010-90-3C-PHE
- SST27VF010-90-3C-PH
- SST27VF010-70-3C-WHE
- SST27VF010-70-3C-WH
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2019-8-29
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