P-Channel Enhancement Mode Power Mos.FET

Description The SST2623 utiltzed advance processing techniques to achieve the lowest The SST2623 is universally used for all commercial-industrial applications. possible on-resistance, extermely efficient and cost-effectiveness device. Features * Low Gate Charge * Low On-Resistance

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

P-Channel Enhancement Mode Power Mos.FET

P-Channel Enhancement Mode MOSFET

DESCRIPTION SST2623J utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. FEATURES • Simple Drive Requirement • Smaller Outline

MosFET

10 Gbits/s Lithium Niobate Electro-Optic Modulator

Description The 10 Gbits/s Electro-Optic Modulator is designed for long-wavelength, single-mode external amplitude modulation applications. It uses an integrated MachZehnder configuration to convert single polarization CW light from a semiconductor (DFB) laser into a timevarying optical output si

10 Gbits/s Lithium Niobate Electro-Optic Modulator

Description The 10 Gbits/s Electro-Optic Modulator is designed for long-wavelength, single-mode external amplitude modulation applications. It uses an integrated MachZehnder configuration to convert single polarization CW light from a semiconductor (DFB) laser into a timevarying optical output si

10 Gbits/s Lithium Niobate Electro-Optic Modulator

Description The 10 Gbits/s Electro-Optic Modulator is designed for long-wavelength, single-mode external amplitude modulation applications. It uses an integrated MachZehnder configuration to convert single polarization CW light from a semiconductor (DFB) laser into a timevarying optical output si

Bandpass Filter

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Halogen and Phosphorus-Free 94V-0 Hole Plugs

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