丝印代码：P05；P-Channel JFET Switch

FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching APPLICATIONS • Analog Switches • Choppers • Commutators

SINGLE P-CHANNEL JFET SWITCH

FEATURES • Direct Replacement For SILICONIX J/SST174 SERIES • LOW ON RESISTANCE rDS(on) ≤ 85Ω • LOW GATE OPERATING CURRENT ID(off) = 10pA

丝印代码：S5；P-Channel JFETs

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丝印代码：S5；P-Channel JFETs

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丝印代码：S5；P-Channel JFETs

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Linear Systems replaces discontinued Siliconix SST175

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JFET Switches

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：P-CHANNEL, SINGLE, JFET SWITCH 分立半导体产品 晶体管 - JFET

a single P-Channel JFET switch

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：MOSFET P-CH JFET 30V SOT23-3 分立半导体产品 晶体管 - JFET

MOSFET P-CH JFET 30V SOT23-3

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: