600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET

文件：1.07829 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：333.93 Kbytes Page：2 Pages

600V N-Channel MOSFET

Power MOSFET

文件：1.07827 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：322.19 Kbytes Page：2 Pages

Power MOSFET

文件：1.07828 Mbytes Page：9 Pages

Power MOSFET

文件：1.07828 Mbytes Page：9 Pages

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes Page：5 Pages

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：987.64 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages