N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Schottky Barrier Diodes TM Ultra High Drive Monolithic

DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broad

Buffered H-Bridge

DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on

Buffered H-Bridge

DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on

14dBm to 20dBm LO Buffers/Splitters with 짹1dB Variation

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14dBm to 20dBm LO Buffers/Splitters with 짹1dB Variation

文件：287.4 Kbytes Page：12 Pages