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GC9987

Schottky Barrier Diodes TM Ultra High Drive Monolithic

DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broad

MICROSEMI

美高森美

GC9987

Silicon & GaAs Schottky Diodes

MICROCHIP

微芯科技

Buffered H-Bridge

DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on

VISHAYVishay Siliconix

威世威世科技公司

Buffered H-Bridge

DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on

VISHAYVishay Siliconix

威世威世科技公司

14dBm to 20dBm LO Buffers/Splitters with 짹1dB Variation

文件:287.4 Kbytes Page:12 Pages

MAXIM

美信

14dBm to 20dBm LO Buffers/Splitters with 짹1dB Variation

文件:287.4 Kbytes Page:12 Pages

MAXIM

美信

GC9987产品属性

  • 类型

    描述

  • 型号

    GC9987

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    Schottky Barrier Diodes TM Ultra High Drive Monolithic

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