DUAL N-AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

文件：338.24 Kbytes Page：8 Pages

DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

文件：343.92 Kbytes Page：8 Pages

DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ V

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ V

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ V

DUAL FULL BRIDGE

DESCRIPTION The L9930 is a dual full-bridge. The output stages are Power Mos switches. ■ RDS ON = 2Ω ■ INTERNAL CLAMPING VOLTAGE = 32V ■ INTERNAL FREE WHEELING DIODES ■ PARALLEL DRIVE CAPABILITY ■ RESISTIVE OR INDUCTIVE LOAD PROTECTION: ■ TEMPERATURE PROTECTION ■ SHORT-CIRCUIT PROTECTION

LINEAR CODEC FOR DIGITAL CELLULAR TELEPHONE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N