Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ V

Low On-resistance, Full Bridge Application on LCD Monitor Inverter

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2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：95.34 Kbytes Page：7 Pages

N-Channel and P-Channel MOSFET use advanced trench Technology

文件：1.36732 Mbytes Page：8 Pages

Low On-resistance, Full Bridge Application on LCD Monitor Inverter

文件：91.79 Kbytes Page：7 Pages

2N AND 2P-CHANNEL ENHANCEMENT

文件：102.03 Kbytes Page：7 Pages