N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Low drive cur

Dual N-Channel 20-V (D-S) MOSFET

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Dual N-Channel 20-V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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Dual N-Channel 20-V (D-S) MOSFET

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Dual N-Channel 20-V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Dual N-channel Enhancement-mode Power MOSFETs

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Dual N-Channel 20-V (D-S) MOSFET

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Dual N-channel Enhancement-mode Power MOSFETs

DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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6A竊?0V Dual N-CHANNEL MOSFET

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