TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switching Applications Analog Switching Applications • Small package • Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)

Load Switching Applications

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Small Low ON resistance MOSFETs

Small Low ON resistance MOSFETs

Load Switching Applications

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Small-signal MOSFET 2 in 1

High Speed Switching Applications

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Dual N-Channel 60 V (D-S) MOSFET

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High Speed Switching Applications

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150V N-Channel MOSFET

Features • 6.4A, 150V, RDS(on) = 0.6Ω @VGS = 10 V • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 9.6 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

150V N-Channel MOSFET

150V N-Channel MOSFET

150V N-Channel MOSFET

Features • 6.4A, 150V, RDS(on) = 0.6Ω @VGS = 10 V • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 9.6 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.4A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.