TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

HighSpeedSwitchingApplications AnalogSwitchingApplications •Smallpackage •LowONresistance:Ron=4.0Ω(max)(@VGS=4V) :Ron=7.0Ω(max)(@VGS=2.5V)

LoadSwitchingApplications

文件：173.2 Kbytes Page：5 Pages

LoadSwitchingApplications

文件：197.54 Kbytes Page：5 Pages

HighSpeedSwitchingApplications

文件：180.43 Kbytes Page：5 Pages

DualN-Channel60V(D-S)MOSFET

文件：945.85 Kbytes Page：6 Pages

HighSpeedSwitchingApplications

文件：176.49 Kbytes Page：5 Pages

150VN-ChannelMOSFET

Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

150VN-ChannelMOSFET

150VN-ChannelMOSFET

150VN-ChannelMOSFET

Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.