Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 66 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 43 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 32 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 4.0 V)

Power Management Switch Applications

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MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 66 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 43 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 32 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 4.0 V)