MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)

MOSFETs Silicon P-Channel MOS

1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOSFETs Silicon P-Channel MOS (U-MOS??

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Small Low ON resistance MOSFETs

Small Low ON resistance MOSFETs

MOSFETs Silicon P-Channel MOS

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P-Channel 20 V (D-S) MOSFET

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High Current Switching Applications

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Small-signal MOSFET

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material - UL Flammability Classification Rating 94V-0

Transient Voltage Suppressors (TVS) Data Sheet

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material - UL Flammability Classification Rating 94V-0

600W 51V TVS transient suppressor diode

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Peak Power Surface Mount TVS

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Peak Power Surface Mount TVS

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