Power Management Switch Applications High-Speed Switching Applications

○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 28 mΩ (max) (@VGS = 10 V)

MOSFETs Silicon N-Channel MOS (U-MOSVII-H)

Applications • Power Management Switches • High-Speed Switching Features (1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V)

6A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter