Field-EffectTransistorSiliconN-ChannelMOSType

○PowerManagementSwitchApplications ○High-SpeedSwitchingApplications •1.8-Vdrive •LowON-resistance:RDS(ON)=289mΩ(max)(@VGS=1.8V) :RDS(ON)=170mΩ(max)(@VGS=2.5V) :RDS(ON)=126mΩ(max)(@VGS=4.0V)

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOSFETsSiliconN-ChannelMOS

Applications •PowerManagementSwitches •High-SpeedSwitching Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=289mΩ(max)(@VGS=1.8V) RDS(ON)=170mΩ(max)(@VGS=2.5V) RDS(ON)=126mΩ(max)(@VGS=4.0V)

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

MOSFETsSiliconN-ChannelMOS

Applications •PowerManagementSwitches •High-SpeedSwitching Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=289mΩ(max)(@VGS=1.8V) RDS(ON)=170mΩ(max)(@VGS=2.5V) RDS(ON)=126mΩ(max)(@VGS=4.0V)

TOSHIBAField-EffectTransistorSiliconN-ChannelMOSType

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