超结MOS，多层外延工艺

• Multi-Epi process SJ-FET • Fast-Recovery body diode • Extremely Low Reverse Recovery Charge • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.24Ω • Ultra Low Gate Charge (typ. Qg = 23nC) • 100%_avalanche tested

SJ-FRMOS

600V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

600V CoolMOS짧 CE Power Transistor

文件：1.01271 Mbytes Page：14 Pages

600V 0.28ohm N-channel MOSFET

文件：1.16753 Mbytes Page：10 Pages

600V N-Channel MOSFET

文件：1.82232 Mbytes Page：8 Pages

600V N-Channel MOSFET

文件：1.82232 Mbytes Page：8 Pages