| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SSF2N60 | 600V N-Channel MOSFET 文件：1.15078 Mbytes Page：7 Pages | GOOD-ARK 固锝电子 |   | |
SSF2N60 | Main Product Characteristics 文件：434.21 Kbytes Page：8 Pages | SILIKRON 新硅能微电子 | | |
SSF2N60 | MOSFET | SILIKRON 新硅能微电子 | | |
600V N-Channel MOSFET 文件：1.15078 Mbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
MOSFET | SILIKRON 新硅能微电子 | | ||
Main Product Characteristics 文件：501.77 Kbytes Page：8 Pages | SILIKRON 新硅能微电子 | | ||
600V N-Channel MOSFET 文件：928.81 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
600V N-Channel MOSFET 文件：928.81 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
600V N-Channel MOSFET 文件：917.97 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
Main Product Characteristics 文件：467.27 Kbytes Page：8 Pages | SILIKRON 新硅能微电子 | | ||
MOSFET | SILIKRON 新硅能微电子 | | ||
600V N-Channel MOSFET Preliminary 文件：917.98 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
Main Product Characteristics 文件：534.22 Kbytes Page：8 Pages | SILIKRON 新硅能微电子 | | ||
600V N-Channel MOSFET 文件：1.13867 Mbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
600V N-Channel MOSFET 文件：1.13867 Mbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
600V N-Channel MOSFET 文件：965.1 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
Main Product Characteristics 文件：457.43 Kbytes Page：8 Pages | SILIKRON 新硅能微电子 | | ||
600V N-Channel MOSFET 文件：965.1 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件：271.17 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
25+ |
TO220F |
18000 |
假一赔百原装正品价格优势实单可谈 |
|||
VBsemi |
21+ |
TO220F |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SILIKRON |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VBsemi |
25+ |
TO220F |
3842 |
||||
SILIKRON |
22+23+ |
TO-251 |
85192 |
代理假一罚十全新原装现货可送货 |
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DdatasheetPDF页码索引
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