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丝印代码:CDP0865GB;Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

PANJIT

強茂

丝印代码:CDP0865GC;Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

PANJIT

強茂

Excellent high frequency performance

文件:1.15836 Mbytes Page:4 Pages

TTELEC

Excellent high frequency performance

文件:1.15836 Mbytes Page:4 Pages

TTELEC

Radial Leaded Inductors

文件:150.39 Kbytes Page:7 Pages

ECM

更新时间:2026-5-24 16:26:01
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