SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Chip SchottkyBarrier Diodes Silicon epitaxial planer type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SCHOTTKY BARRIER RECTIFIER

Features · Low Forward Voltage · Epitaxial Construction with Oxide Passivation · Guard Ring for Transient and ESD Protection · Surge Overload Rating to 150A Peak · Low Power Loss · Fast Switching · Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 sec

8A 50V Schottky diode

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8.0 AMP SCHOTTKY BARRIER RECTIFIERS 8

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8.0 AMP SCHOTTKY BARRIER RECTIFIERS 8

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8.0 AMP SCHOTTKY BARRIER RECTIFIERS 8

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8.0 AMP SCHOTTKY BARRIER RECTIFIERS 8

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8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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8.0 AMP SCHOTTKY BARRIER RECTIFIERS 8

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Surface Mount Schottky Barrier Rectifier

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8.0 AMP SCHOTTKY BARRIER RECTIFIERS 8

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8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

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SMB封装二极管

肖特基二极管

肖特基二极管

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C)

Plastic-Encapsulate Transistors PNP Silicon

Plastic-Encapsulate Transistors PNP Silicon P/b Lead(Pb)-Free

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector Dissipation: PC=0.3W (TC=25°C) APPLICATIONS ● High Collector Current.

TRANSISTOR(PNP)

FEATURES High Collector Current Complementary to SS8050

TO-92 Plastic-Encapsulate Transistors (PNP)

FEATURES Power dissipation PC : 1 W (Ta=25℃)

TO-92 Plastic-Encapsulate Transistors

FEATURES Power dissipation PC : 1 W (TA=25℃)

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : - 1.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃)

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to SS8050

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector Dissipation: PC=0.3W (TC=25°C) APPLICATIONS ● High Collector Current.

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550. ● Collector Dissipation: PC=0.3W (TC=25°C) APPLICATIONS ● High Collector Current.

Silicon Epitaxial Planar Transistor

EATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8050. ● Collector Dissipation: PC=0.3W (TC=25°C) APPLICATIONS ● High Collector Current.

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ● High Collector Current ● Complementary to SS8050

TO-92 Plastic-Encapsulate Transistors

Features Power dissipation

SOT-323 Plastic-Encapsulate Transistors

FEATURES High Collector Current Complementary to SS8050

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current Complementary to SS8050

Plastic-Encapsulate Transistors

FEATURES Complimentary to SS8050

T RANSISTOR (PNP)

FEATURES High Collector Current Complementary to SS8050

PLASTIC-ENCAPSULATE TRANSISTORS

FEATURES © Commplimentray to PXT8050 APPLICATIONS © This device is designed as a general purpose amplifier and switching. |

Complimentary to SS8050

Plastic-Encapsulate Transistors FEATURES Complimentary to SS8050

PNP Transistors

PNP Transistors Features ● Collector Current: IC=-1.5A

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially uitable for AF-driver stages and low power output stages. As complementary type the NPN transistor

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation.

SOT-323 Plastic-Encapsulate Transistors

FEATURES High Collector Current Complementary to SS8050

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C)

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C)

PNP Silicon Transistors

Features • Marking : SS8550 • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25°C) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Lead Free Finish/RoHS Compliant (P Suffix desi

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C)

Plastic-Encapsulate Transistors PNP Silicon

Plastic-Encapsulate Transistors PNP Silicon P/b Lead(Pb)-Free

PNP Silicon Transistors

Features • Marking : SS8550 • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25°C) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Lead Free Finish/RoHS Compliant (P Suffix desi

PNP Transistors

PNP Transistors Features ● Collector Current: IC=-1.5A

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1. - Surface mount package ideally suited for automatic insertion.

PNP Transistors

PNP Transistors Features ● Collector Current: IC=-1.5A

PNP Transistors

PNP Transistors Features ● Collector Current: IC=-1.5A

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1. - Surface mount package ideally suited for automatic insertion.

TRANSISTOR竊?PNP 竊

FEATURES Power dissipation PCM : 0.3 W（ Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

TRANSISTOR竊?PNP 竊

FEATURES Power dissipation PCM : 0.3 W（ Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

PNP Silicon General Purpose Transistor

Power dissipation PCM : 1 W Collector Current ICM : -1.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55℃ ~ + 150℃

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550W. ● Collector Dissipation: PC=0.2W (TC=25°C) APPLICATIONS ● High Collector Current.

PNP Silicon General Purpose Transistor

Power dissipation PCM : 0.2 W Collector Current ICM : -1.5 A Collector-base voltage FEATURES V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55℃ ~ + 150℃

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 sec

LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c