Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550W. ● Collector dissipation:PC=200mW(TC=25℃) APPLICATIONS ● High Collector Current.

NPN Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 1.5A） ● Complementary To SS8550W. ● Collector dissipation:PC=200mW(TC=25℃) APPLICATIONS ● High Collector Current.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Complimentary to SS8550W

Silicon Epitaxial Planar Transistor

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Silicon Epitaxial Planar Transistor

文件：193.22 Kbytes Page：4 Pages

General Purpose Transistor

文件：264.24 Kbytes Page：2 Pages

小信号三极管

小信号三极管

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V