plug-in ultra-fast recovery diode

Features Schottky Barrier Chip Low Power Loss, High Efficiency Guard Ring Die Construction For Use in Low Voltage Application Ideally Suited for Automatic Assembly Plastic Case Material has UL Flammability Classification Rating 94V-O

6A 100V Schottky diode

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6A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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Schottky 

plug-in ultra-fast recovery diode

Features Schottky Barrier Chip Low Power Loss, High Efficiency Guard Ring Die Construction For Use in Low Voltage Application Ideally Suited for Automatic Assembly Plastic Case Material has UL Flammability Classification Rating 94V-O

6A 100V Schottky diode

文件：390.94 Kbytes Page：2 Pages

Transient Voltage Suppressor Diode, 500W

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肖特基二极管

6A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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肖特基二极管

6A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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6A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

Phase Control SCR (125-175 Amperes Avg 100-1600 Volts)

Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.