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SS312BF

Surface Mount Schottky Barrier Rectifier

文件:121.5 Kbytes Page:3 Pages

SEMIPOWER

芯派科技

SS312BF

Surface Mount Schottky Barrier Rectifier

文件:357.2 Kbytes Page:2 Pages

GXELECTRONICS

星合电子

SS312BF

Surface Mount Schottky Barrier Rectifier

文件:1.13305 Mbytes Page:3 Pages

JUXING

广东钜兴电子

SS312BF

丝印代码:S312B;Surface Mount Schottky Barrier Rectifier

文件:1.05013 Mbytes Page:3 Pages

JUXING

广东钜兴电子

SS312BF

丝印代码:S312B;Surface Mount Schottky Barrier Rectifier

文件:416.64 Kbytes Page:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SS312BF

Surface MountSchottky Barrier Rectifier

文件:87.86 Kbytes Page:3 Pages

YFWDIODE

佑风微

SS312BF

丝印代码:S312B;Surface Mount Schottky Barrier Rectifier

文件:404.31 Kbytes Page:3 Pages

YFWDIODE

佑风微

SS312BF

肖特基二极管

JINGDAO

晶导

SS312BF

Schottky Diode

GoalTop

POWER SCHOTTKY

Semitehelec

SCHOTTKYBARRIER RECTIFIERS

文件:885.56 Kbytes Page:3 Pages

PJSEMI

平晶半导体

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

SUTEX

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

NTE

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

STMICROELECTRONICS

意法半导体

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

STMICROELECTRONICS

意法半导体

Operational Amplifiers

文件:200.55 Kbytes Page:6 Pages

NSC

国半

SS312BF产品属性

  • 类型

    描述

  • VRRM (V):

    120

  • IFSM (A):

    80

  • VF (V):

    0.85

  • VF IF(A):

    3

  • IR (mA):

    0.3

  • IR VR(V):

    120

  • Package Outline:

    SMBF

更新时间:2026-5-19 14:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
JINGDAO/晶导微
23+
SMBF
5000
原装现货
JINGDAO/晶导微
23+
SMBF
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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