N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

JFETs (N & P Channel)

The NTE312 is a N-channel silicon JFET (Junction Field Effect Transistor), designed for VHF amplifier and mixer applications. High trans conductance and high power gain. Drain and gate leads separated for high maximum stable gain. ·Cross-modulation minimized by square-law transfer characteristic\n·High power gain\n·Drain and gate leads separated for high maximum stable gain\n·Cross-modulation minimized by square-law transfer characteristic;

Silicon NPN Phototransistor Detector

Features: • High Sensitivity • GaAs LED–Wide Spectral Range, with GaAs LED. • Low Dark Current • Side–View Plastic Package

Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington

Features: • Epoxy Resin Package • Narrow Acceptance: ∆θ = ±13° Typ • High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 • Visible Light Cut–Off Applications: • VCRs, Cassette Tape Recorders • Floppy Disk Drives • Optoelectronic Switches • Automatic Stroboscopes

Phototransistor Detectors

Features:\n• Epoxy Resin Package\n• Narrow Acceptance: ∆θ = ±13° Typ\n• High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2\n• Visible Light Cut–OffApplications:\n• VCRs, Cassette Tape Recorders\n• Floppy Disk Drives\n• Optoelectronic Switches\n• Automatic Stroboscopes

Phototransistor Detectors

Features:\n• Epoxy Resin Package\n• Compact\n• Intermediate Acceptance: ∆θ = ±40° Typ\n• Visible Light Cut–OffApplications:\n• VCRs\n• Optoelectronic Switches

Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington

Features: • Epoxy Resin Package • Compact • Intermediate Acceptance: ∆θ = ±40° Typ • Visible Light Cut–Off Applications: • VCRs • Optoelectronic Switches

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

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