Hall Effect Omnipolar Switches

The SS275 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. \n●Solid-State Reliability much better than reed switch\nOmnipolar, output switches with absolute value of North or South pole from magnet\n●Wide operating voltage range from 3.5V to 24V\n●High sensitivity for direct reed switch replacement applications;

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

CMOS Omnipolar High Sensitivity Micropower Hall Switch

文件：235.88 Kbytes Page：6 Pages

High Energy Thermally Protected SSMOV

文件：304.71 Kbytes Page：5 Pages

Silicon Carbide Schottky Diode

文件：542.49 Kbytes Page：3 Pages

Silicon Carbide Schottky Diode

文件：542.49 Kbytes Page：3 Pages

封装/外壳：6-SMD，扁平引线裸焊盘 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 1200V DE275 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 5A 1200V Triple Common Cathode SiC Schottky Diode

肖特基二极管与整流器 5A 1200V Triple SiC Schottky Diode

封装/外壳：6-SMD，扁平引线裸焊盘 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 1200V DE275 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Carbide Schottky Diode

文件：542.49 Kbytes Page：3 Pages

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacit

SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

Features • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX,LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capa