150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET

文件：262.81 Kbytes Page：16 Pages

N-CHANNEL BROADBAND RF POWER FET

文件：312.91 Kbytes Page：13 Pages

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

TMOS

Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·N-Channel Enhancement Mode Device\n·Low Thermal Resistance\n·100% Ruggedness Tested at Rated Output Power\n·Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)\n·Low Crss — 17 pF typ. @ VDS = 28 V;

封装/外壳：375-04 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 2CH 65V 500MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 150W, 500MHz, 28V

文件：639.96 Kbytes Page：19 Pages

N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET

文件：262.81 Kbytes Page：16 Pages

The RF MOSFET Line 150W, 500MHz, 28V

文件：639.96 Kbytes Page：19 Pages

The RF MOSFET Line

文件：639.96 Kbytes Page：19 Pages

The RF MOSFET Line 150W, 500MHz, 28V

文件：1.34444 Mbytes Page：20 Pages

The RF MOSFET Line 100W, 500MHz, 28V

文件：541.27 Kbytes Page：17 Pages

The RF MOSFET Line 100W, 500MHz, 28V

文件：541.27 Kbytes Page：17 Pages

N-CHANNEL BROADBAND RF POWER FET

文件：312.91 Kbytes Page：13 Pages

封装/外壳：333-04 包装：托盘 描述：FET RF 65V 500MHZ 333-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

文件：541.27 Kbytes Page：17 Pages

The RF MOSFET Line 100W, 500MHz, 28V

文件：1.18866 Mbytes Page：18 Pages

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacit

SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

Features • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX,LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capa