1.0AMP. Low VF Schottky Barrier Rectifiers

Features Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SS12AL~SS16AL). standard >10ΚV(SS110AL~SS120AL). Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. Ultra

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

12 V, 1 A, Low VCE(sat) PNP Transistor

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PNP Transistor

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High Efficiency DC-DC Converters

文件：1.9268 Mbytes Page：20 Pages

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE SCHOTTKY 20V 1A SMA 分立半导体产品 二极管 - 整流器 - 单

Power MOSFET 170 mAmps, 100 Volts

12 V, 8.0 A, Low VCE(sat) NPN Transistor

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12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：132.34 Kbytes Page：5 Pages

PNP Transistor

文件：106.39 Kbytes Page：5 Pages

12 V, 1 A, Low VCE(sat) PNP Transistor

文件：100 Kbytes Page：5 Pages

12 V, 4.0 A, Low VCE(sat) NPN Transistor

文件：131.7 Kbytes Page：5 Pages

12 V, 3 A, Low VCE(sat) PNP Transistor

文件：63.31 Kbytes Page：6 Pages

12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件：106.56 Kbytes Page：5 Pages

12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：102.7 Kbytes Page：5 Pages

12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件：108.33 Kbytes Page：5 Pages

12 V, 1 A, Low VCE(sat) PNP Transistor

文件：87.66 Kbytes Page：5 Pages

12 V, 3 A, Low VCE(sat) PNP Transistor

文件：134.14 Kbytes Page：5 Pages

12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件：102.78 Kbytes Page：5 Pages

NPN Transistor

文件：133.48 Kbytes Page：5 Pages

12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件：60.62 Kbytes Page：5 Pages

12 V, 7.0 A, Low VCE(sat) NPN Transistor

文件：88.25 Kbytes Page：5 Pages

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE SCHOTTKY 20V 1A SMA 分立半导体产品 二极管 - 整流器 - 单