Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE SCHOTTKY 20V 1A SMA 分立半导体产品 二极管 - 整流器 - 单

Power MOSFET 170 mAmps, 100 Volts

12 V, 1 A, Low VCE(sat) PNP Transistor

文件：87.66 Kbytes Page：5 Pages

12 V, 3 A, Low VCE(sat) PNP Transistor

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12 V, 6.0 A, Low VCE(sat) PNP Transistor

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NPN Transistor

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12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件：108.33 Kbytes Page：5 Pages

12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件：60.62 Kbytes Page：5 Pages

12 V, 7.0 A, Low VCE(sat) NPN Transistor

文件：88.25 Kbytes Page：5 Pages

12 V, 4.0 A, Low VCE(sat) NPN Transistor

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12 V, 3 A, Low VCE(sat) PNP Transistor

文件：63.31 Kbytes Page：6 Pages

12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件：106.56 Kbytes Page：5 Pages

12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：102.7 Kbytes Page：5 Pages

12 V, 1 A, Low VCE(sat) PNP Transistor

文件：86.37 Kbytes Page：5 Pages

PNP Transistor

文件：69.19 Kbytes Page：5 Pages

High Efficiency DC-DC Converters

文件：1.9268 Mbytes Page：20 Pages

12 V, 8.0 A, Low VCE(sat) NPN Transistor

文件：88.79 Kbytes Page：6 Pages

12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：132.34 Kbytes Page：5 Pages

PNP Transistor

文件：106.39 Kbytes Page：5 Pages

12 V, 1 A, Low VCE(sat) PNP Transistor

文件：100 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE SCHOTTKY 20V 1A SMA 分立半导体产品 二极管 - 整流器 - 单

CIT SWITCH

SPECIFICATIONS Electrical Ratings 3A @ 120VAC, 28VDC; 1.5A @ 250VAC See contact options Electrical Life 30,000 cycles typical Contact Resistance 1,000MΩ min Operating Temperature -4

CIT SWITCH

SPECIFICATIONS Electrical Ratings 3A @ 120VAC, 28VDC; 1.5A @ 250VAC See contact options Electrical Life 30,000 cycles typical Contact Resistance 1,000MΩ min Operating Temperature -4

CIT SWITCH

SPECIFICATIONS Electrical Ratings 3A @ 120VAC, 28VDC; 1.5A @ 250VAC See contact options Electrical Life 30,000 cycles typical Contact Resistance 1,000MΩ min Operating Temperature -4

Switch operating force

文件：432.67 Kbytes Page：1 Pages

Switch operating force

文件：432.67 Kbytes Page：1 Pages