丝印代码：SS12；Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

丝印代码：SS12；Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

丝印代码：SS12；Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

丝印代码：SS12；Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE SCHOTTKY 20V 1A SMA 分立半导体产品 二极管 - 整流器 - 单

丝印代码：SS12；12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件：60.62 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 7.0 A, Low VCE(sat) NPN Transistor

文件：88.25 Kbytes Page：5 Pages

Power MOSFET 170 mAmps, 100 Volts

丝印代码：SS12；12 V, 4.0 A, Low VCE(sat) NPN Transistor

文件：131.7 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 3 A, Low VCE(sat) PNP Transistor

文件：63.31 Kbytes Page：6 Pages

丝印代码：SS12；12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件：106.56 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：102.7 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件：108.33 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 1 A, Low VCE(sat) PNP Transistor

文件：87.66 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 3 A, Low VCE(sat) PNP Transistor

文件：134.14 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件：102.78 Kbytes Page：5 Pages

丝印代码：SS12；NPN Transistor

文件：133.48 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 1 A, Low VCE(sat) PNP Transistor

文件：86.37 Kbytes Page：5 Pages

丝印代码：SS12；PNP Transistor

文件：69.19 Kbytes Page：5 Pages

丝印代码：SS12；High Efficiency DC-DC Converters

文件：1.9268 Mbytes Page：20 Pages

丝印代码：SS12；12 V, 8.0 A, Low VCE(sat) NPN Transistor

文件：88.79 Kbytes Page：6 Pages

丝印代码：SS12；12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：132.34 Kbytes Page：5 Pages

丝印代码：SS12；PNP Transistor

文件：106.39 Kbytes Page：5 Pages

丝印代码：SS12；12 V, 1 A, Low VCE(sat) PNP Transistor

文件：100 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE SCHOTTKY 20V 1A SMA 分立半导体产品 二极管 - 整流器 - 单

Zener Voltage Regulators

Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. Features • 500 mW Rating on FR−4 or FR−5 Board • Wi

14 DIP, 5.0 Volt, HCMOS/TTL, VCXO

文件：275.18 Kbytes Page：1 Pages

14 DIP, 5.0 Volt, HCMOS/TTL, VCXO

文件：275.18 Kbytes Page：1 Pages

14 DIP, 5.0 Volt, HCMOS/TTL, VCXO

文件：275.18 Kbytes Page：1 Pages