丝印代码：SS1015；Schottky Barrier Rectifiers

FEATURES Guardring for overvoltage protection Low power loss Extremely fast switching High forward surge capability High frequency operation Solder dip 275 °C max. 7 s, per JESD 22-B106

肖特基二极管

丝印代码：K115；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

丝印代码：K115；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Turn-On Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

SCHOTTKY BARRIE R RECTIFIERS

FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in

丝印代码：K115；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

丝印代码：G15；Surface Mount Schottky Barrier Rectifier

Features  Low power loss, high efficiency  High surge current capability  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Turn-On Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  Low forward voltage drop  Deal for automated placement  Low power loss, high efficiency  High surge current capability  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard  AEC-Q101 qualified

丝印代码：ERL；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  Low forward voltage drop  Deal for automated placement  Low power loss, high efficiency  High surge current capability  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard  AEC-Q101 qualified

肖特基二极管

肖特基二极管

SCHOTTKY BARRIE R RECTIFIERS

文件：1.51255 Mbytes Page：2 Pages

封装/外壳：SOD-123H 包装：卷带（TR）剪切带（CT） 描述：SOD-123HE, SKY 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-123H 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SOD-123HE, SKY 分立半导体产品 二极管 - 整流器 - 单

Schottky rectifiers

文件：197.62 Kbytes Page：3 Pages

SCHOTTKY BARRIE R RECTIFIERS

文件：1.51451 Mbytes Page：2 Pages

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices