丝印代码：A1015；PNP Epitaxial Silicon Transistor

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丝印代码：A1015；PNP Epitaxial Silicon Transistor

文件：233.42 Kbytes Page：7 Pages

PNP Epitaxial Silicon Transistor

KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

PNP EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-Emitter Voltage: BVCEO=-50V * Collector current up to 150mA * High hFE linearity * Complement to 2SC1815

PNP EPITAXIAL PLANAR TRANSISTOR

The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

LOW FREQUENCY AMPLIFIER

LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815

丝印代码：BA；SOT-23 Plastic-Encapsulate Transistors

FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815

丝印代码：BA；TRANSISTOR

TRANSISTOR (PNP) FEATURES ● Power dissipation

High voltage and high current

FEATURES High voltage and high current Excellent hFE Linearity Low niose ,Complementary to C1815

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power dissipation

PNP SILICON TRANSISTOR

2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.

PNP Plastic-Encapsulated Transistor

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SOT-23 Plastic-Encapsulate Transistors

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Plastic-Encapsulate Transistors

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丝印代码：BA；Plastic-Encapsulate Transistors

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SOT-23 Plastic-Encapsulate Transistors

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LOW FREQUENCY AMPLIFIER

PNP General Purpose Transistors

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SOT-23 Plastic-Encapsulate Transistors

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TRANSISTOR (PNP)

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PNP Plastic-Encapsulated Transistor

文件：449.7 Kbytes Page：2 Pages

TRANSISTOR (PNP)

TRANSISTOR竊?PNP 竊

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TRANSISTOR (PNP)

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TRANSISTOR竊?PNP 竊

文件：131.52 Kbytes Page：2 Pages

贴片晶体管

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices