RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS

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RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS &

30V P-Channel MOSFET

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Product Summary VDS (V) = -30V I

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

Gasket design for optimal acoustic performance

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30V P-Channel MOSFET

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