1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

GENERAL DESCRIPTION The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spik

1.5A Dual High-Speed Power MOSFET Drivers

Features: • High Peak Output Current: 1.5A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability: 1000 pF in 25 ns (typical) • Short Delay Times: 40 ns (typical) • Matched Rise and Fall Times • Low Supply Current: - With Logic ‘1’ Input – 4 mA

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR LOW-SIDE 8DIP 集成电路（IC） 栅极驱动器

1.5A Dual High-Speed Power MOSFET Drivers

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1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

文件：75.47 Kbytes Page：6 Pages

1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

文件：75.47 Kbytes Page：6 Pages

1.5A Dual High-Speed Power MOSFET Drivers

文件：356.66 Kbytes Page：20 Pages

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR LOW-SIDE 8DIP 集成电路（IC） 栅极驱动器

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

30V P-Channel MOSFET

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Product Summary VDS (V) = -30V I

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS &

Gasket design for optimal acoustic performance

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30V P-Channel MOSFET

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