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SR835

8.0 Amp SCHOTTKY BARRIER RECTIFIERS MEETS UL SPECIFICATION 94V-0

Features ■ HIGH CURRENT CAPABILITY WITH LOW VF ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ MEETS UL SPECIFICATION 94V-0

FCI

富加宜

SR835

8.0 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

BYTES

SR835

MINIATURE SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 8.0 Amperes FEATURES . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 . Metal sliicon junction, majority carriet conduction . Guard ring for overcoltage protection . Low power loss, high efficien

CHENG-YI

辰頤电子

SR835

8.0 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES • Axial lead type devices for through hole design • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • High surge capability • Guardring for overvoltage protection • Ultra high-speed switching • Silicon epitaxial planar chip, metal silicon junctio

FORMOSA

美丽微半导体

SR835

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 100 Volts CURRENT 8.0 Amperes FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound · Exceeds environmental standards of MIL-S-19500/228 · Low power loss, high efficien

MIC

昌福电子

SR835

8.0 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

UNIOHM

厚声

SR835

8.0A Schottky Barrier Rectifiers

Features ◇ Low forward voltage drop ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Epitaxial construction

LUGUANG

鲁光电子

SR835

Schottky Diodes

分立

RECTRON

丽正

SR835

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes)

文件:25.49 Kbytes Page:2 Pages

RECTRON

丽正

8.0AMP Schottky Barrier Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

SECOS

喜可士

Schottky Diodes

分立

RECTRON

丽正

8.0AMP Schottky Barrier Rectifiers

文件:267.06 Kbytes Page:2 Pages

SECOS

喜可士

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 8.0 Ampere

文件:194.46 Kbytes Page:3 Pages

RECTRON

丽正

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes)

文件:24.48 Kbytes Page:2 Pages

RECTRON

丽正

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

MOTOROLA

摩托罗拉

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

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